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th58nvg3s0h ba i6 2013-09- 20 c 1 toshiba mos digital integrated circuit silicon gate cmos 8 gbit ( 1g ? 8 bit) cmos nand e 2 prom description the th 58nvg 3 s0h b a i 6 is a single 3.3v 8 gbit ( 9 , 126 , 805 , 504 bits) nand ele ctrically erasable and programmable read - only memory (nand e 2 prom) organized as ( 4096 ? 256 ) bytes ? 64 pages ? 4096 blocks. the device has two 4352 - byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352 - byte increments. the erase operation is implemente d in a single block unit ( 256 kbytes ? 16 kbytes: 4352 bytes ? 64 pages). the th 58nvg 3 s0h b a i 6 is a serial - type memory device which utilizes the i/o pins for both address and data input/output as well as for command inputs. the erase and program operations are automatically executed making the device most suitable for applications such as solid - state file storage, voice recording, image file memory for still cameras and other systems which require high - density non - volatile memory data storage. features ? organization x8 memory cell array 4352 ? 128k ? 8 ? 2 register 4352 ? 8 page size 4352 bytes block size (256 k ? 16 k) bytes ? modes read , reset , auto page program, auto block erase, status read, page copy, multi pag e program, multi block erase, multi page copy, multi page read ? mode control serial input / output command control ? number of valid blocks min 4016 blocks max 4096 blocks ? power supply v cc ? 2.7v to 3.6v ? access time cell array to register 25 ? s max serial read cycle 25 ns min (cl= 50pf ) ? program/erase time auto page program 300 ? s /page typ. auto block erase 2 .5 ms/block typ. ? operating current read (25 ns cycle) 30 ma max. program (avg.) 30 ma max erase (avg.) 30 ma max standby 10 0 ? a max ? package p- vfbga67 -0608- 0.80 - 001 (weight: 0.101 g typ.) ? 8 bit ecc for each 512byte is required.
th58nvg3s0h ba i6 2013-09- 20 c 2 pin assignment (top view) 1 2 3 4 5 6 7 8 a nc nc nc nc nc b nc ale v ss nc c nc nc cle nc nc nc nc d nc nc nc nc nc nc e nc nc nc nc nc nc f nc nc nc nc nc nc g nc i/o1 nc nc nc v cc h nc nc i/o2 nc v cc i/o6 i/o8 nc j nc v ss i/o3 i/o4 i/o5 i/o7 v ss nc k nc nc nc nc nc nc pin names i/o1 to i/o8 i/o port chip enable write enable read enable cle command latch enable ale address latch enable write protec t ready/busy v cc power supply v ss ground nc no connection re wp we by / ry we ce by ry/
th58nvg3s0h ba i6 2013-09- 20 c 3 block diagram absolute maximum ratings symbol rating value unit v cc power supply voltage ? 0.6 to 4.6 v v in input voltage ? 0.6 to 4.6 v v i/o input /output voltage ? 0.6 to v cc ? 0.3 ( ? 4.6 v) v p d power dissipation 0.3 w t solder soldering temperature (10 s) 260 c t stg storage temperature ? 55 to 1 25 c t opr operating temperature - 4 0 to 85 c capacitance * (ta ? 25 c, f ? 1 mhz ) symb0l parameter condition min max unit c in input v in ? 0 v ? 2 0 pf c out output v out ? 0 v ? ? 2 0 pf * this parameter is periodically sampled and is not tested for every device. i/o control circuit status register command register column buffer column decoder data register sense amp memory cell array control circuit hv genera tor row address decoder logic control v cc i/o1 v ss i/o8 cle ale row address buffer decoder to address register wp by / ry we ce re
th58nvg3s0h ba i6 2013-09- 20 c 4 valid blocks symbol parameter min typ. max unit n vb number of valid bl ocks 4016 ? 4096 blocks note: the device occasionally contains unusable blocks. refer to application note (13) toward the end of this document. t he first block (block 0) is guaranteed to be a valid block at the time of shipment. the specification for the minimum number of valid blocks is applicable over lifetime the number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations. recommended dc operating conditions symbol parameter min typ. ma x unit v cc power supply voltage 2.7 ? 3.6 v v ih high level input voltage vcc x 0.8 ? v cc ? 0. 3 v v il low level input voltage ? 0. 3 * ? vcc x 0.2 v * ? 2 v (pulse width lower than 20 ns) dc characteristics (ta ? - 4 0 to 85 , v cc ? 2.7 to 3.6v ) symbol par ameter condition min typ. max unit i il input leakage current v in ? 0 v to v cc ? ? ? 2 0 ? a i lo output leakage current v out ? 0 v to v cc ? ? ? ? 2 0 ? a i cco1 serial read current ? v il , i out ? 0 ma, t cycle ? 25 ns ? ? 30 ma i cco2 pr ogramming current ? ? ? ? 30 ma i cco3 erasing current ? ? ? 30 ma i ccs standby current ? v cc ? 0.2 v , ? 0 v/v cc ? ? 10 0 ? a v oh high level output voltage i oh ? ? 0. 1 ma vcc C 0.2 ? ? v v ol low level outp ut voltage i ol ? 0.1 ma ? ? 0.2 v i ol ( ) output current of pin v ol ? 0.2 v ? 4 ? ma ce by / ry wp
th58nvg3s0h ba i6 2013-09- 20 c 5 ac characteristics and recommended operating conditions (ta ? - 4 0 to 85 , v cc ? 2.7 to 3.6v ) symbol parameter min max unit t cls cle setup time 12 ? ns t clh cle hold time 5 ? ns t cs setup time 20 ? ns t ch hold time 5 ? ns t wp write pulse width 12 ? ns t als ale setup time 12 ? ns t alh ale hold time 5 ? ns t ds data setup time 12 ? ns t dh data hold time 5 ? ns t wc write cycle time 25 ? ns t wh high hold time 10 ? ns t ww high to low 100 ? ns t rr ready to fal ling edge 20 ? ns t rw ready to falling edge 20 ? ? ns t rp read pulse width 12 ? ? ns t rc read cycle time 25 ? ns t rea access time ? 20 ns tcea access time ? 25 ns t clr cle low to low 10 ? ns t ar ale low to low 10 ? ns t rhoh h igh to output hold time 25 ? ns t rloh low to output hold time 5 ? ns t rhz high to output high impedance ? ? 60 ns t chz high to output high impedance ? 20 ns t csd high to ale or cle don t care 0 ? ns t reh high hold time 10 ? ns t ir output - high - imped ance - to - falling edge 0 ? ns t rhw high to low 30 ? ns t whc high to low 30 ? ns t whr high to low 60 ? ns t r memory cell array to starting address ? 25 ? s t dcbsyr1 data cache busy in read cache (following 31h and 3fh) ? 25 ? s t dcbsyr2 data cache busy in page copy (following 3ah) ? 30 ? s t wb high to b usy ? 100 ns t rst device reset time (ready/read/program/erase) ? 5 / 5 /10/500 ? s *1: tcls and tals can not be shorter than twp *2: tcs should be longer than twp + 8ns. ce wp we re
th58nvg3s0h ba i6 2013-09- 20 c 6 ac test conditions parameter condition v cc : 2. 7 to 3.6v input level v cc ? 0.2 v , 0.2 v input pulse rise and fall time 3 ns input comparison level vcc / 2 output data comparison level vcc / 2 output load c l ( 50 pf ) ? 1 ttl note: busy to ready time depends on the pull - up resistor tied to the pin. (refer to ap plication note (9) toward the end of this document.) programming and erasing characteristics (ta ? - 4 0 to 85 , v cc ? 2.7 to 3.6v ) symbol parameter min typ. max unit notes t prog average programming time ? 300 700 ? s t dcbsyw1 data cache busy time in w rite cache ( following 11h) ? ? ? ? 10 ? ? s t dcbsyw2 data cache busy time in write cache ( following 15h) ? ? ? ? 700 ? ? s (2) n number of partial program cycles in the same page ? ? 4 (1) t berase block erasing time ? 2 .5 5 ms (1) refer to application note (12) t oward the end of this document. (2) t dcbsyw2 depends on the timing between internal programming time and data in time. data output when treh is long, output buffers are disabled by /re=high, and the hold time of data output depend on trhoh (2 5 ns min). on this condition, waveforms look like normal serial read mode. when treh is short, output buffers are not disabled by /re=high, and the hold time of data output depend on trloh ( 5ns min). on this condition, output buffers are disabled by the rising edg e of cle,ale,/ce or falling edge of /we, and waveforms look like extended data output mode. by / ry
th58nvg3s0h ba i6 2013-09- 20 c 7 timing diagrams latch timing diagram for command/address/data command input cycle timing diagram cle ale hold time t dh setup time t ds i/o : v ih or v il t cs t dh t ds t als t alh t wp t cls t ch t clh : v ih or v il cle ale i/o ce we re
th58nvg3s0h ba i6 2013-09- 20 c 8 address input cycle timing diagram data input cycle timing diagram pa16 to 17 pa8 to 15 ca8 to 1 2 : v ih or v il t dh t ds t cls cle t als t alh t wp t wh t wp ca0 to 7 t dh t ds t cs t cs ale i/o t dh t ds t wp t wh t dh t ds t wp t wh t wc t dh t ds t wp t wh t wc pa0 to 7 t clh t ch t ch t wp t wp t wh t wp t als t wc t dh t ds d in 0 d in 1 t clh t ch ale cle i/o d in 4351 t dh t ds t dh t d s t cs t cls t ch t cs t alh ce we
th58nvg3s0h ba i6 2013-09- 20 c 9 serial read cycle timing diagram status read cycle timing diagram t reh t chz t rhz t rea t rc t rr t rhz t rea t rhz t rea i/o t rhoh t rhoh t rhoh t rp t rp t rp : v ih or v il t cea colu mn addr ess a t cea co lu mn addr ess a : v ih o r v il * : 70h represents the hexadecimal number t whr t dh t ds t cls t clr t cs t clh t ch t wp status output 70h * t whc t ir t rea t rhz t chz cle i/o t rhoh t cea ce by / ry re we
th58nvg3s0h ba i6 2013-09- 20 c 10 read cycle timing diagram read cycle timing diagram: when interrupted by 30h p a16 to 17 pa8 to 15 pa0 to 7 ca8 to 1 2 ca0 to 7 i/o t cs t cls t clh t ch t dh t ds t wc t als t alh cle ale t dh t ds t dh t ds t dh t ds t dh t ds t alh t clr t r t dh t ds t wb t cs t cls t clh t ch t als t rc t rr t rea col. add. n t dh t ds 00h d out n d out n ? 1 t chz t rhz t rhoh col. add. n t csd t cea 30h pa16 to 17 pa8 to 15 pa0 to 7 ca8 to 1 2 ca0 to 7 i/o t cs t cls t clh t ch t dh t ds t wc t als t alh cle ale t dh t ds t dh t ds t dh t ds t dh t ds t alh t clr t r t dh t ds t wb t cs t cls t clh t ch t als t rc t rr t rea col. add. n data out from col. add. n t dh t ds 00h d out n d out n ? 1 t cea by / ry ce ce we re
th58nvg3s0h ba i6 2013-09- 20 c 11 read cycle with data cache timing diagram (1/2) 30h pa16 to 17 pa8 to 15 pa0 to 7 ca8 to 1 2 ca0 to 7 i/o t dh t ds t wc t als t alh cle ale t dh t ds t dh t ds t dh t ds t dh t ds t alh t r t dh t ds t wb t als t rc t rr t rea column address n * t dh t ds 00h d out 0 d out 1 tcea page address m d out 31h t dh t ds t wb t dcbsyr1 31h t dh t ds t wb d out 0 t rr t rea t dcbsyr1 t clr t clr tcea page address m col. add. 0 col. add. 0 page address m ? 1 t rw t cs t cls t clh t ch 1 continues to o f next page 1 * the column address will be reset to 0 by the 31h command input. t cs t cls t clh t ch t cs t cls t clh t ch t cs t cls t clh t ch we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 12 read cycle with data cache timing diagram (2/2) make sure to terminate the operation with 3fh com mand. i/o cle ale d out t clr t wb 31h t dh t ds t wb 31h t dh t ds t rc t rr t rea page address m ? 1 page address m ? x t clr t wb t rc t rr t rea tcea 3fh t dh t ds d out 0 d out 1 d out t rc t rr t rea tcea page address m ? 2 t dcbsyr1 t dcbsyr1 t dcbsyr1 t clr col. add. 0 col. add. 0 col. add. 0 tcea d out 0 d out 1 d out d out 0 d out 1 d out 1 t cs t cls t clh t ch t cs t cls t clh t ch t cs t cls t clh t ch continues from of previous page 1 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 13 column address change in read cycle timing diagram (1/2) t clr i/o t cs t cls t clh t ch t wc t als t alh t r cle ale t dh t ds t dh t ds t alh t wb t cs t cls t clh t ch t als t rc t rea tce a t rr page address p page address p column address a 00h ca0 to 7 t dh t ds ca8 to 1 2 t dh t ds pa0 to 7 t dh t ds pa8 to 15 t dh t ds pa16 to 17 t dh t ds 30h d out a d out a ? 1 d out a ? n 1 continues to of next page 1 ce we re by / ry
th58nvg3s0h ba i6 2013-09- 20 c 14 column address change in read cycle timing diagram (2/2) i/o t cs t cls t clh t ch 05h ca0 to 7 ca8 to 1 2 t wc t als t alh cle ale t dh t ds t dh t ds t dh t ds column address b e0h t dh t ds t alh t cs t c ls t clh t ch t als t rea d out a ? n t rhw t rc t clr tcea t ir 1 t whr page address p column address b d out b ? n d out b ? 1 d out b continues from of previous page 1 ce we re by / ry
th58nvg3s0h ba i6 2013-09- 20 c 15 data output timing diagram command i/o t rc t dh t rp t rp cle ale t rloh t reh t rea t rhz t rea t cs t cls t clh t ch t rp t rr t rea t rloh t ds t chz t rhoh t rhoh t cea dout dout t alh dout we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 16 auto - progra m operation timing diagram ca0 to 7 t cls t cls t als t ds t dh cle ale : v ih or v il t clh t ch t cs t ds t dh t alh i/o : do not input data while data i s being output. t cs t dh t ds t dh t prog t wb t ds t alh t als * ) m: up to 4351 (byte input data for ? 8 device). column address n ca8 to 1 2 d in n d in m * 10h 70h status output pa0 to 7 pa8 to 15 pa16 to 17 80h d in n+1 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 17 auto - program operation with data cache timing diagram (1/3) t cls t als t ds t dh 80h cle ale : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output . t cs t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 4351 1 continues to 1 of next page pa16 to 17 ca0 to ca1 2 is 0 in this diagram. ca0 to 7 ca0 to 7 ca8 to 1 2 p a0 to 7 pa8 to 15 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 18 auto - program operation with data cache timing diagram (2/3) t cls t als t ds t dh ca0 to 7 80h cle ale t clh t ch t cs t cls t ds t dh t alh i/o : v ih or v il : do not input data while data is being output. pa0 t o 7 ca8 to 1 2 t cs 1 continues from 1 of previous page t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 4351 pa16 to 17 2 pa8 to 15 ca0 to 7 repeat a max of 62 times (in order to program pages 1 to 62 of a block). continues to 2 of next page we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 19 auto - program operation with data cache timing diagram (3/3) (note) make sure to terminate the operation with 80h - 10h - command sequence. if the operation is terminated by 80h - 15h command sequence, monitor i/o 6 (ready / busy) by issuing status read command (70h) and make sure the previous page program operation is completed. if the page program operation is completed issue ffh reset before next operation. 70h t cls t als t ds t dh cle ale : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs 2 t dh t ds t dh t prog ( * 1) t wb t ds t alh t als d in 4351 continues from 2 of previous page ( * 1) t prog : since the last page programming by 10h command is initiated after the previous cache program, the t prog during cache programming is given by the following equation. t prog ? t prog of the last page ? t prog of the previous page ? a a ? (command input cycle ? address input cycle ? data input cycle time of the last page) if a exceeds the t prog of previous page, t prog of the last page is t prog max. 80h ca0 to 7 ca8 to 1 2 pa0 to 7 pa8 to 15 pa16 to 17 d in n d in n+1 10h status we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 20 multi - page program operation with data cache timing diagram (1/4) continues to 1 of next page t cls t als t ds t dh 80h cle ale : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs t dh t ds t dh t dcbsyw1 d in n d in n+1 t wb 81h t ds 11h t alh t als d in 4351 1 pa16 to 17 ca0 to 7 ca0 to 7 ca8 to 1 2 pa0 to 7 pa8 to 15 page address m district - 0 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 21 multi - page program operation with data cache timing diagram (2/4) : v ih or v il : do not input data while data is being output. continues to 2 of next page t cls t als t ds t dh ca0 to 7 81h cle ale t clh t ch t cs t cls t ds t dh t alh i/o pa0 to 7 ca8 to 1 2 t cs 1 continues from 1 of previous page t dh t ds t dh t dcbsyw2 d in n d in n+1 t wb 80h t ds 15h t alh t als d in 4351 pa16 to 17 2 pa8 to 15 ca0 to 7 repeat a max of 63 times (in order to program pages 0 to 62 of a block). page address m district - 1 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 22 multi - page pr ogram operation with data cache timing diagram (3/4) i/o t cls t al s t ds t dh 80h cle ale : v ih or v il t clh t ch t cs t cls t ds t dh t alh : do not input data while data is being output. t cs t dh t ds t d h t dcbsyw1 d in n d in n+1 t wb 81h t ds 11h t alh t als d in 4351 3 continues to 3 of next page pa16 to 17 ca0 to 7 ca0 to 7 ca8 to 1 2 pa0 to 7 pa8 to 15 page address m+n district - 0 2 continues from 2 of previous page we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 23 multi - page program operation with data cache timing diagram (4/4) (note) make sure to terminate the operation with 81 h -10h - command sequence. if the operation is terminated by 8 1 h - 15h command sequence, monitor i/o 6 (ready / busy) by issuing status read command (70h) and make sure the previous page program operation is completed. if the page program operation is completed issue ffh reset before next op eration. ( * 1) t prog : since the last page programm ing by 10h command is initiated after the previous cache program, the t prog during cache programming is given by the following equation. t prog ? t prog of the last page ? t prog of the previous page ? a a ? (command input cycle ? address input cycle ? data input cycle time of the last page) if a exceeds the t prog of previous page, t prog of the last page is t prog max. status output 71h t cls t als t ds t dh cle ale : v ih or v il t clh t ch t cs t cls t ds t dh t alh i/o : do not input data while data is being output. t cs 3 t dh t ds t dh t prog ( * 1) t wb t ds t alh t als d in 4351 continues from 3 of previous page 81h ca0 to 7 ca8 to 1 2 pa0 to 7 pa8 to 15 pa16 to 17 d in n+1 10h d in n page address m+n district - 1 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 24 auto block erase timing diagram t cs 60h pa8 to 15 cle ale : v ih or v il t cls t clh t cls pa0 to 7 t ds t dh t als : do not input data while data is being output. auto block erase setup command i/o d0h 70h t wb t berase busy status read command erase start command status output t alh pa16 to 17 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 25 multi block erase timing diagram 60h pa8 to 15 cle ale : v ih or v il t cs t cls t clh t cls pa0 to 7 t ds t dh t als : do not input data while data is being output. d0h 71h t wb t berase busy status read command erase start command auto block erase setup command i/o status output t alh repeat 2 times (district - 0,1) pa16 to 17 we re ce by / ry
th58nvg3s0h ba i6 2013-09- 20 c 26 id read operation timing diagram : v ih or v il cle t c ea ale i/o t a r id read command address 00 maker code device code ` t rea t cls t cs t d s t ch t alh t als t cls t cs t ch t alh t dh 90h 00h 98h t rea d 3 h t rea t rea see table 5 see table 5 t rea i f fail see table 5 5 t h data 4 th data 3 rd data we ce re
th58nvg3s0h ba i6 2013-09- 20 c 27 pin functions the device is a serial access memory which utilizes time - sharing input of address information. command latch enable: cle th e cle input signal is used to control loading of the operation mode command into the internal command register. the command is latched into the command register from the i/o port on the rising edge of the signal while cle is high. address latch enable: ale the ale signal is used to control loading address information into the internal address register. address information is latched into the address register from the i/o port on the rising edge of while a le is high. chip enable: the device goes into a low - power standby mode when goes high during the device is in ready state. the signal is ignored when device is in busy state ( ? l), such as during a program or erase or read operation, and will not enter standby mode even if the input goes high . write enable: the signal is used to control the acquisition of data from th e i/o port. read enable: the signal controls serial data output. data is available t rea after the falling edge of . the internal column address counter is also incremented (address = address + l) on this falling edge. i/o port : i/o1 to 8 the i/o1 to 8 pins are used as a port for transferring address, command and input/output data to and from the device. write protect: the signal is used to protect the device from accidental programming or erasing. the internal voltage regulator is reset when is low. this signal is usually used for protecting the data during the power - on/off sequence when input signals are invalid. ready/busy: the output s ignal is used to indicate the operating condition of the device. the signal is in busy state ( = l) during the program, erase and read operations and will return to ready state ( = h) after completion of the operation. the output buffer for this signal is an open drain and has to be pulled - up to vccq with an appropriate resister. if signal is not pulled- up to vccq( open state ), device operation can not guarantee. wp we by / ry we wp by / ry ce ce re re
th58nvg3s0h ba i6 2013-09- 20 c 28 schematic cell layout and address assignment the program operation works on page units while the erase operation works on block units . a page consists of 4352 bytes in which 4096 bytes are used for main memory storage and 256 bytes are for redundancy or for other uses. 1 page ? 4352 bytes 1 block ? 4352 bytes ? 64 pages ? ( 256 k ? 16k ) bytes capacity ? 4352 bytes ? 64pages ? 4096 blocks an address is read in via the i/o port over five consecutive clock cycles, as shown in table 1. table 1. a ddressing i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 ca0 to ca1 2 : column address pa0 to pa1 7 : page address pa6 to pa1 7 : block address pa0 to pa5: nand address in block first cycle ca7 ca6 ca5 ca4 ca3 ca2 ca1 ca0 second cycle l l l ca12 ca11 ca10 ca9 ca8 third cycle pa7 pa6 pa5 pa4 pa3 pa2 pa1 pa0 fourth cycle pa15 pa14 pa13 pa12 pa11 pa10 pa9 pa8 fifth cycle l l l l l l pa17 pa16 4352 262144 pages 4096 blocks 4096 4096 256 256 page buffer data cach e i/o8 i/o1 64 pages ? 1 block 8i/o
th58nvg3s0h ba i6 2013-09- 20 c 29 operation mode: logic and command tables the operation modes such as program, erase, read and reset are controlled by command operations shown in table 3. address input, command input and data input/output are controlled by the cle, ale, , , and signals, as shown in t able 2. table 2. logic table cle ale * 1 command input h l l h * data input l l l h h address input l h l h * serial data output l l l h * during program (busy) * * * * * h during erase (busy) * * * * * h during read (busy) * * h * * * * * l h ( * 2) h ( * 2) * program, erase inhibit * * * * * l standby * * h * * 0 v/v cc h: v ih , l: v il , * : v ih or v il * 1: refer to application note ( 10 ) toward the end of t his document regarding the signal when program or erase inhibit * 2: if is low during read busy, and must be held high to avoid unintended command/address inpu t to the device or read to device . reset or status read command can be input during read busy. ce ce re re ce we we we wp wp re
th58nvg3s0h ba i6 2013-09- 20 c 30 table 3. command table (hex) first cycle second cycle acceptable while busy serial data input 80 ? ? read 00 30 c o lumn address change in serial data output 05 e0 read with data cache 31 ? ? read start for last page in read cycle with data cache 3f ? ? auto page program 80 10 column address change in serial data input 85 ? auto program with data cache 80 15 multi page program 80 1 1 81 15 81 10 read for page copy (2) with data out 00 3a auto program with data cache during page copy (2) 8c 15 auto program for last page during page copy (2) 8c 10 auto block erase 60 d0 id read 90 ? status read 70 ? ? ? status read for multi - page program o r multi block erase 71 ? ? ? reset ff ? ? ? table 4. read mode operation states cle ale i/o1 to i/o8 power output select l l l h l data output active output deselect l l l h h high impedance active h: v ih , l: v il hex data bit assignment (example) 1 0 0 0 0 0 0 0 8 7 6 5 4 3 2 i/o1 serial data input: 80h ce re we
th58nvg3s0h ba i6 2013-09- 20 c 31 device operation read mode read mode is set when the "00h" and 30h commands are issued to the command register. between the two commands, a start address for the read mode needs to be issued. after initial power on sequence, 00h command is latched into the internal command register. therefore read operation after power on sequence is ex e cuted by the setting of only five address cycles and 30h command. refer to the figures below for the sequence and the block diagram (refer to the detailed timing chart.) . random column address change in read cycle cle 00h ale i/o busy 30h page address n column address m m m+1 m+2 page address n t r start - address input a data transfer operation from the cell array to the data cache via page buffer starts on the rising edge of in the 30h command input cycle (after the address information has been latched). the device will be in the busy state during this transfer period. after the transfer period, the device returns to ready state. serial data can be output synchronously wi th the clock from the start address designated in the address input cycle. cell array select page n m m data cache page buffer i/o1 to 8: m ? 4351 start - address input select page n m cle 00h ale i/o col. m page n m busy page n 30h 05h e0h col. m m m ? 1 m m ? 1 m ? 2 m ? 3 m ? 4 page n col. m start from col. m start from col. m during the serial data output from the data cache, the column address can be changed by inputting a new column address using the 05h and e0h commands. the data is read o ut in serial starting at the new column address. random column address change operation can be done multiple times within the same page. t r m ? 2 m ? 3 by / ry re we ce
th58nvg3s0h ba i6 2013-09- 20 c 32 read operation with read cache the device has a read operation with data cache that enables the high speed read operation shown below. when the block addres s chan ges, this sequence has to be started from the beginning. p age n ? 2 if the 31h command is issued to the device, the data content of the next pa ge is transferred to the page buffer during serial data out from the data cache, and therefore the tr (data transfer from mem ory cell to data register) will be reduced. 1 normal read. data is transferred from page n to data cache through page buffer. duri ng this time period, the device outputs busy state for tr max. 2 after the ready/busy returns to ready, 31h command is is sued and data is transferred to data cache from page buffer again. this data transfer takes tdcbsyr1 max and the completion of this ti me period can be detected by ready/busy signal. 3 data of page n ? 1 is transferred to page buffer from cell while the data of page n in data cache can be read out by /re clock simultaneously. 4 the 31h command makes data of page n ? 1 transfer to data c ache from page buffer after the completion of the transfer from cell to page buffer. the device outputs busy state for tdcbsyr1 max.. this busy period depends on the combination of the internal data transfer time from cell to page buffer and the serial dat a out time. 5 data of page n ? 2 is transferred to page buffer from cell while the data of page n + 1 in data cache can be read out by /re clock simultaneously 6 the 3fh command makes the data of page n ? 2 transfer to the data cache from the page buffer after the completion of the t ransfer from cell to page buffer. the device outputs busy state for tdcbsyr1 max.. this busy period depends on the combination of the internal data transfer time from cell to page buffer and the serial data out time. 7 data of page n ? 2 in data cache can be read out, but since the 3fh command does not transfer the data from the memory cell to page buffer, the device can accept new command input immediately after the completion of serial data out. cl e 00h ale i/o t r 30h col. m page n 0 1 2 3 31h 31h 0 1 2 3 page address n column 0 4351 page address n ? 1 4351 0 1 2 3 page address n ? 2 4351 3fh data cache page buffer cell array 1 2 3 3 4 5 5 1 6 7 p age n p age n page n ? 1 p age n 30 h 31 h & clock p age n ? 1 p age n ? 2 p age n ? 1 31 h & clock page n ? 2 3 fh & clock 1 2 4 3 5 6 7 t dcbsyr1 t dcbsyr1 t dcbsyr1 by / ry ce we re
th58nvg3s0h ba i6 2013-09- 20 c 33 multi page read operation the device has a multi page read operation and multi page read with data cache operation. (1) multi page read without data cache the sequence of command and address inp ut is shown below. same page address ( pa0 to pa5) within each district has to be selected. the data transfer operation from the cell array to the data cache via page buffer starts on the risi ng edge of in the 30h command input cycle (after the 2 districts address information has been latched). the device will be in the busy state during this transfer period. after the transfer period, the device returns to ready state . serial data can be output synchronously with the clock from the start address designated in the address input cycle. selected page reading district 0 district 1 selected page ( 3 cycle) ( 3 cycle) (5 cycle) (5 cycle) (2 cycle) 60 c ommand input page address pa0 to pa1 7 (district 0) tr address input 60 page address pa0 to pa1 7 (district 1) address input 30 a a 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (district 0) address input 05 column address ca0 to ca1 2 (dis trict 0) address input e0 b b a a data output 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (district 1) address input 05 column address ca0 to ca1 2 (district 1) address input e0 b b data output (district 0) (district 1) we by / ry re
th58nvg3s0h ba i6 2013-09- 20 c 34 (2) multi page read with data cache when the block address changes (increments) this sequenced has to be started from the beginning. the sequence of command and address input is shown below. same page address ( pa0 to pa5) within each district has to be selected. 60 c ommand input page address pa0 to pa1 7 (page m0 ; district 0) tr addres s input 60 page address pa0 to pa1 7 (page n0 ; district 1) address input 30 a a 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (page m0 ; district 0) address input 05 column address ca0 to ca1 2 (district 0) address input e0 b a a data output 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (page n0 ; district 1) address input 05 column address ca0 to ca1 2 (district 1) address input e0 b b data output (district 0) (district 1) 31 c c 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (page m63 ; district 0) address input 05 column address ca0 to ca1 2 (district 0) address inp ut e0 d c c data output 00 c ommand input column + page address ca0 to ca1 2 , pa0 to pa1 7 (page n63 ; district 1) address input 05 column address ca0 to ca1 2 (district 1) address input e0 d d data output (dis trict 0) (district 1) 3f b return to a repeat a max of 63 times tdcbsyr1 tdcbsyr1 d by / ry
th58nvg3s0h ba i6 2013-09- 20 c 35 (3) notes (a) internal addressing in relation with the districts to use multi page read op eration, the internal addressing should be considered in relation with the district. ? the device consists from 2 districts. ? each district consists from 1024 erase blocks. ? the allocation rule is follows. (a) district 0: block 0, block 2, block 4, block 6,, block 2046 (b) district 1: block 1, block 3, block 5, block 7,, block 2047 (c) district 0: block 2048, block 2050, block 2 052, block 2054,, block 4094 (d) district 1: block 2049, block 2051, block 2053, block 2055,, block 4095 combination of (a) and (b) or (c) and (d) can only be selected. (b) address input restriction for the multi page read operation there are fo llowing restrictions in using multi page read; (restriction) maximum one block should be selected from each district. same page address (pa0 to pa5) within two districts has to be selected. for example ; (60) [district 0, page address 0x00000] (60) [distr ict 1, page address 0x00040] (30) (60) [district 0, page address 0x00001] (60) [district 1, page address 0x00041] (30) (acceptance) there is no order limitation of the district for the address input. for example, following operation is accepted; (60) [di strict 0] (60) [district 1] (30) (60) [district 1] (60) [district 0] (30) it requires no mutual address relation between the selected blocks from each district. (c) signal make sure is held to high level when multi page read operation is performed wp
th58nvg3s0h ba i6 2013-09- 20 c 36 auto page program operation the device carries out an automatic page program operation when it receives a "10h" program command after the address and data have been input. the sequence of command, address an d data input is shown below. (refer to the detailed timing chart.) random column address change in auto page program operation the column address can be changed by the 85h command during the data input sequence of the auto page program operation. two address input cycles after the 85h command are recognized as a new column address for the data input. after the new data is input to the new column address, the 10h command initiates the actual data program into the selected page automatically. the random column address change operation can be repeated multiple times within the same page. 80h page n col. m 85h din din 10h status din din din din col. m din din 70h busy data input selected page reading & verification program col. m col. m the data is transferred (programmed) from the data cache via the page buffer to the selected page on the rising edge of following input of the 10h command. after programming, the progr ammed data is transferred back to the page buffer to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. selected page program data input read& verification cle 80h ale i/o page p col. m din 10h 70h din din din data status out we re ce by ry/
th58nvg3s0h ba i6 2013-09- 20 c 37 multi page program the device has a multi page program, which enables even higher speed program operation compared to auto page program. the seq uence of command, address and data input is shown below. (refer to the detailed timing chart.) although two planes are programmed simultaneously , pass/fail is not available for each page by "70h" command when the program operatio n completes. status bit of i/o 1 is set to 1 when any of the pages fails. limitation in addressing with multi page program is shown below. multi page program note: any command between 11h and 81h is prohibited except 70h and ffh. data input 80h 11h plane 0 ( 2048 block) block 0 block 2 block 4 09 2 block 4094 81h 10h plane 1 ( 2048 block) block 1 block 3 block 4093 block 4095 i/o1 ~ 8 i/o1 pass fail 1 0 tdcbsyw1 tprog ca0 ~ ca1 2 : valid pa0 ~ p a5 : valid pa6 : district0 pa7 ~ pa1 7 : valid 80h address & data input 11h ca0 ~ ca1 2 : valid pa0 ~ pa5 : valid pa6 : district1 pa7 ~ pa1 7 : valid 81h address & data input 10h 70h note by / ry
th58nvg3s0h ba i6 2013-09- 20 c 38 auto page program operation with data cache the devic e has an auto page program with data cache operation enabling the high speed program operation shown below. when the block ad dress changes this sequenced has to be started from the beginning. cle ale i/o page n 80h add add add add status output din 15h 70h din din page n ? 1 80h add add add add 1 status output din 15h 70h din din page n ? p 80h add add a dd add 3 4 status output din 10h 70h din din 5 6 data cache page buffer cell array p age n ? p 1 2 3 4 5 5 6 p age n p age n ? 1 data for p age n ? p 3 add add add data for p age n data for p age n data for p age n ? 1 data for p a ge n ? 1 p age n ? p ? 1 t dcbsyw2 t dcbsyw2 t prog (note) issuing the 15h command to the device after serial data input initiates the program operation with data cache 1 data for page n is input to data cache. 2 data is transferred to the page buffer by the 15h command. during the transfer the ready/busy outputs busy state (t dcbsyw2 ). 3 data is programmed to the selected page while the data for page n ? 1 is input to the data cache. 4 by the 15h command, the data in the data cache is transferred to the page buffe r after the programming of page n is completed. the device output busy state from the 15h command until the data cache becomes empty. the duration of this period depends on timing between the internal programming of page n and serial data input for page n ? 1 (t dcbsyw2 ). 5 data for page n ? p is input to the data cache while the data of the page n ? p ? 1 is being programmed. 6 the programming with data cache is terminated by the 10h command. when the device becomes ready , it shows that the internal programmin g of the page n ? p is completed. note: since the last page programming by the 10h command is initiated after the previous cache program, the tprog during cache programming is given by the following; t prog ? t prog for the last page ? t prog of the previous page ? ( command input cycle ? address input cycle ? data input cycle time of the last page) 2 by / ry we ce re
th58nvg3s0h ba i6 2013-09- 20 c 39 pass/fail status for each page programmed by the auto page programming with data cache operation can be detected by the status read operation. ? i/o1 : pass/fail of the current page program operation . ? i/o2 : pass/fail of the previous page program operation . the pass/f ail status on i/o1 and i/o2 are valid under the following condition s. ? status on i/o1: page buffer read y /busy is ready state. the page buffer ready/busy is output on i/o6 by status r ead operation or pin after the 10h command ? statu s on i/o2: data cache read/busy is ready state. the data cache ready/busy is output on i/o7 by status read operation or pin after the 15h command. 80 h 15h 70 h status out page 1 data cache busy page buffer busy page 1 page 2 70 h 70 h page 2 70 h 80 h 15h page n ? 1 80 h 10h page n page n ? 1 page n 70 h 80 h 15h i/o2 => i/o1 => invalid invalid page 1 invalid page n ? 2 invalid invalid invalid page n ? 1 page n page 1 page 2 70 h if the p age b uffer busy returns to ready before the next 80h command input, and if status read is done during this ready period, the status read provides pass/fail for page 2 on i/o1 and pass/fail result f or page1 on i/o2 status out status out status out status out status ou t example) pin by / ry by ry/
th58nvg3s0h ba i6 2013-09- 20 c 40 multi page program with data cache the device has a multi page program with data cache operation, which enables even higher speed program operation compared to auto page program with data cache as shown below. when th e block address changes (increments) this sequenced has to be started from the beginning. the sequence of command, address and data input is shown below. (refer to the detailed timing chart.) after 15h or 10h program command is input to device, physical programing starts as follows. for details of auto program with data cache, refer to auto page program with data cache . the data is transferred (programmed) from the page buffer to the selected page o n the rising edge of /we following input of the 15h or 10h command. after programming, the programmed data is transferred back to the register to be automatically verified by the device. if the programming does not succeed, the program/verify operation is repeated by the device until success is achieved or until the maximum loop number set in the device is reached. selected page reading & verification program district 0 district 1 data input command for multi - page program data input 0 to 4351 15 81 80 11 10 81 80 11 data input command address input (district 0) data input 0 to 4351 dummy program command data input command data input 0 to 4351 address input (district 1) program with data cache command a ddress input (district 0) dummy program command auto page program command data input 0 to 4351 address input (district1) data input command for multi - page program by / ry
th58nvg3s0h ba i6 2013-09- 20 c 41 starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total 64 times with incrementing the page address in the blocks, and then input the last page data of the blocks, 10h command executes final programming . make sure to terminate with 81h - 10h - command sequence. in this full sequence, the command sequence is fol lowing. after the 15h or 10h command, the results of the above operation is shown through the 71h status read command. the 71h command status description is as below. status output i/o1 describes pass/fail condi tion of district 0 and 1(or data of i/o2 and i/o3). if one of the districts fails during multi page program operation, it shows fail . i/o2 to 5 shows the pass/fail condition of each district. for details on chip status1 and chip status2 , refer to se ction status read . i/o1 chip status1 : pass/fail pass: 0 fail: 1 i/o2 district 0 chip status1 : pass/fail pass: 0 fail: 1 i/o3 district 1 chip status1 : pass/fail pass: 0 fail: 1 i/o4 district 0 chip status2 : pass/fail pass: 0 fail: 1 i/o5 dist rict 1 chip status2 : pass/fail pass: 0 fail: 1 i/o6 ready/busy ready: 1 busy: 0 i/o7 data cache ready/busy ready: 1 busy: 0 i/o8 write protect protect: 0 not protect: 1 10 or15 71 pass i/o status read command fail 15 15 10 15 81 81 81 81 11 11 11 11 80 80 80 80 1st 63th 64th by / ry
th58nvg3s0h ba i6 2013-09- 20 c 42 internal addressing in relation with the districts to use multi page progra m operation, the internal addressing should be considered in relation with the district. ? the device consists from 2 districts. ? each district consists from 1024 erase blocks. ? the allocation rule is follows. (a) district 0: block 0, block 2, block 4, block 6,, block 2046 (b) district 1: block 1, block 3, block 5, block 7,, block 2047 (c) district 0: block 2048, block 2050, bloc k 2052, block 2054,, block 4094 (d) district 1: block 2049, block 2051, block 2053, block 2055,, block 4095 combination of (a) and (b) or (c) and (d) can only be selected. address input restriction for the multi page program with data cache oper ation there are following restrictions in using multi page program with data cache; (restriction) maximum one block should be selected from each district. same page address (pa0 to pa5) within two districts has to be selected. for example ; (80) [district 0, page address 0x00000] (11) (81) [district 1, page address 0x00040] (15 or 10) (80) [district 0, page address 0x00001] (11) (81) [district 1, page address 0x00041] (15 or 10) (acceptance) there is no order limitation of the district for the address in put. for example, following operation is accepted; (80) [district 0] (11) (81) [district 1] (15 or 10) (80) [district 1] (11) (81) [district 0] (15 or 10) it requires no mutual address relation between the selected blocks from each district. operating restriction during the multi page program with data cache operation (restriction) the operation has to be terminated with 10h command. once the operation is started, no commands other than the commands shown in the timing diagram is allowed to be input e xcept for status read command and reset command.
th58nvg3s0h ba i6 2013-09- 20 c 43 page copy (2) by using page copy (2), data in a page can be copied to another page after the data has been read out. when the block address changes (increments) this sequenced has to be started from the b eginning. page copy (2) operation is as following. 1 data for page n is transferred to the data cache. 2 data for page n is read out. 3 copy page address m is input and if the data needs to be changed , changed data is input. 4 data cache for page m is transferred to the page buffer. 5 after the ready state, data for page n ? p1 is output from the data cache while the data of page m is being programmed. when changing data , changed data is input. 1 3 4 5 2 t r t dcbsyw2 t dcbsyr2 00 c ommand input address ca0 to ca1 2 , pa0 to pa1 7 (page n) address input 30 address input 8c a data input 15 00 address input 3a data output a ddress ca0 to ca1 2 , pa0 to pa1 7 (page m) address ca0 to ca1 2 , pa0 to pa1 7 (page n+p1) a data output col = 0 start col = 0 start data cache page buffer cell array 1 2 3 4 5 p age n data for p age n data for p age n p age m p age n + p1 data for p age n + p1 data for p age m by ry/
th58nvg3s0h ba i6 2013-09- 20 c 44 6 copy page address (m ? r1) is input and if the data needs to be changed , changed data is input. 7 a fter programming of page m is completed, data cache for page m ? r1 is transferred to the page buffer. 8 by the 15h command, the data in the page buffer is programmed to page m ? r1 . data for page n ? p2 is transferred to the data cache. 9 the data in the page buffer is programmed to page m ? rn ? 1 . data for page n ? pn is transferred to the data cache. data cache page buffer cell array 6 7 8 p age m data for p age m ? r1 data for p age m ? r1 data for p age n ? p2 data for p age n ? pn p age m ? r1 page n + p2 p age n ? p1 p age m ? rn ? 1 page n ? pn p age m + rn ? 1 9 8 9 6 7 t dcbsyw2 t dcbsyr2 t dcbsyr2 when changing data, changed data is input. c ommand input address ca0 to ca1 2 , pa0 to pa1 7 (page m+r1) b 00 address input 3a data output address input 8c data input 15 00 address input 3a data output address ca0 to ca1 2 , pa0 to pa1 7 (page n+p2) address ca0 to ca1 2 , pa0 to pa1 7 (page n+pn) a b a col = 0 start col = 0 start by / ry
th58nvg3s0h ba i6 2013-09- 20 c 45 10 copy page address (m ? rn) is input and if the data needs to be changed , changed data is input. 11 by issuing the 10h command, the data in the page buffer is programmed to page m ? rn . (*1) since the last page programming by the 10h command is initiated after the previous cache program, the t prog here will be expected as the following, t prog ? t prog of the last page ? tprog of the previous page ? ( command input cycle ? address input cycle + data output/input cycle time of the last page) note) this operation needs to be executed within district - 0 or district - 1 . data input is required only if previous data output needs to be al tered. if the data has to be changed, locate the desired address with the column and page address input after the 8ch command, and change only the data that needs be changed. if the data does not have to be changed, data input cycles are not required. mak e sure is held to high level when page copy (2) operation is performed. also make sure the page copy operation is terminated with 8ch - 10h command sequence data cache page buffer cell array p age m ? rn ? 1 data for p age m ? rn data for p age m ? rn p age m + rn 10 11 10 11 t prog ( *1 ) c ommand input address ca0 to ca1 2 , pa0 to pa1 7 (page m+rn) address input 8c data input 10 70 status output b b wp by / ry
th58nvg3s0h ba i6 2013-09- 20 c 46 multi page copy (2) by using multi page copy (2), data in two pages can be copied to other pages after the data has been read out. when each block address changes (increments) this sequence has to be started from the beginning. same pa ge address (pa0 to pa5) within two districts has to be selected. t r 60 c ommand input address pa0 to pa1 7 (page m0 ; district 0) address input 30 a 00 address input e0 data output address ca0 to ca1 2 , pa0 to pa1 7 (page m0) a 60 address input address pa0 to pa1 7 (page n0 ; district 1) 05 address input address ca0 to ca1 2 (col = 0) t dcbsyw1 00 address input 05 address input e0 b b data output address ca0 to ca1 2 , pa0 to pa1 7 (page n0) address ca0 to ca1 2 (col = 0) 8c address input 11 data input address ca0 to ca1 2 , pa0 to pa1 7 (page m0 ; dist rict 0) a a 00 address input 05 address input e0 data output address ca0 to ca1 2 , pa0 to pa1 7 (page m1) address ca0 to ca1 2 (col = 0) 00 address input 05 address input e0 data ou tput address ca0 to ca1 2 , pa0 to pa1 7 (page n1) address ca0 to ca1 2 (col = 0) d d c c t dcbsyw2 8c address input 15 data input address ca0 to ca1 2 , pa0 to pa1 7 (page n0 ; district 1) 60 address pa0 to pa1 7 (page m1 ; district 0) address input 3a 60 address input address pa0 to pa1 7 (page n1 ; district 1) c c b b t dcbsyr2 by ry/
th58nvg3s0h ba i6 2013-09- 20 c 47 t dcbsyw1 00 address input 05 address input e0 g g data output address ca0 to ca1 2 , pa0 to pa1 7 (page n63) address ca0 to ca1 2 (col = 0) 8c address input 11 data input address ca0 to ca1 2 , pa0 to pa1 7 (page m63 ; district 0) f f t dcbsyr2 60 address pa0 to pa1 7 (page m63 ; district 0) address inpu t 3a f 00 address input e0 data output address ca0 to ca1 2 , pa0 to pa1 7 (page m63) f 60 address input address pa0 to pa1 7 (page n63 ; district 1) 05 address input address ca0 to ca1 2 (col = 0) e e t dcbsyw1 8c address input 11 data input address ca0 to ca1 2 , pa0 to pa1 7 (page m1 ; district 0) e e d d 8c address input 15 data input address ca0 to ca1 2 , pa0 to pa1 7 (page n1 ; district 1) t dcbsyw2 g g 8c add ress input 10 data input address ca0 to ca1 2 , pa0 to pa1 7 (page n63 ; district 1) t prog (*1) note) this operation needs to be executed within each district. data input is required only if previous data output needs to be altered. if the data ha s to be changed, locate the desired address with the column and page address input after the 8ch command, and change only the data that needs be changed. if the data does not have to be changed, data input cycles are not required. make sure is held to high level when multi page copy (2) operation is performed. also make sure the multi page copy operation is terminated with 8ch - 10h command sequence ( * 1) t prog : since the last page programming by 10h command is initiated after the previous cache program, the t prog* during cache programming is given by the following equation. t prog ? t prog of the last page ? t prog of the previous page - a a ? (command input cycle ? address input cycle ? data output/input cycle time of the last page) i f a exceeds the t prog of previous page, t prog of the last page is t prog max. by ry/ wp
th58nvg3s0h ba i6 2013-09- 20 c 48 auto block erase the auto block erase operation starts on the rising edge of after the erase start command d0h which follows the erase setup command 60h . this two - cycle process for erase operations acts as an extra layer of protection from accidental erasure of data due to external noise. the device automatically executes the erase and verify operations. multi block erase the multi block erase operatio n starts by selecting two block addresses before d0h command as in below diagram. the device automatically executes the erase and verify operations and the result can be monitored by checking the status by 71h status read command. for details on 71h status read command, refer to section multi page program with data cache . internal addressing in relation with the districts to use multi block erase operation, the internal addressing should be considered in relation with the district. ? the device consist s from 2 districts. ? each district consists from 1024 erase blocks. ? the allocation rule is follows. (a) district 0: block 0, block 2, block 4, block 6,, block 2046 (b) district 1: block 1, block 3, block 5, block 7,, block 2047 (c) district 0: block 2048, block 2050, block 2052, block 2054,, block 4094 (d) district 1: block 2049, block 2051, block 2053, block 2055,, blo ck 4095 combination of (a) and (b) or (c) and (d) can only be selected. pass i/o fail 60 d0 70 block address input: 3 cycles status read command busy erase start command pass i/o fail 60 d0 71 block address input: 3 cycles district 0 status read command busy erase start command 60 block address input: 3 cycles district 1 we by / ry
th58nvg3s0h ba i6 2013-09- 20 c 49 address input restriction for the multi block erase there are following restrictions in using multi block erase (restriction) maximum one block should be selected from each distr ict. for example ; (60) [district 0] (60) [district 1] (d0) (acceptance) there is no order limitation of the district for the address input. for example, following operation is accepted; (60) [district 1] (60) [district 0] (d0) it requires no mutual addre ss relation between the selected blocks from each district. make sure to terminate the operation with d0h command. if the operation needs to be terminated before d0h command input, input the ffh reset command to terminate the operation.
th58nvg3s0h ba i6 2013-09- 20 c 50 id read the device contains id codes which can be used to identify the device type, the manufacturer, and features of the device. the id codes can be read out under the following timing conditions: table 5. code table description i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 hex data 1st data maker code 1 0 0 1 1 0 0 0 98h 2nd data device code 1 1 0 1 0 0 1 1 d 3 h 3rd data chip number, cell type 1 0 0 1 0 0 0 1 9 1 h 4th data page size, b lock size, i/o width 0 0 1 0 0 1 1 0 26 h 5th data plane number 0 1 1 1 0 1 1 0 76h 3rd data description i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 internal chip number 1 2 4 8 0 0 1 1 0 1 0 1 cell type 2 level cell 4 level cell 8 level cel l 16 level cell 0 0 1 1 0 1 0 1 reserved 1 0 0 1 90h 00h 98h d 3 h see table 5 see table 5 cle t cea ale i/o t ar t rea id read command address 00 maker code device code see table 5 3rd data 4th data 5th data we ce re
th58nvg3s0h ba i6 2013-09- 20 c 51 4th data description i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 page size (without redundant area) 1 kb 2 kb 4 kb 8 kb 0 0 1 1 0 1 0 1 block size (without redundant area) 64 kb 128 kb 256 k b 512 kb 0 0 1 1 0 1 0 1 i/o w idth x8 x16 0 1 reserved 0 0 1 5th data description i/o8 i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 plane number 1 plane 2 plane 4 plane 8 plane 0 0 1 1 0 1 0 1 reserved 0 1 1 1 1 0
th58nvg3s0h ba i6 2013-09- 20 c 52 status read the device automatically implements the execution and verification of the program and erase operations. the status read function is used to monitor the ready/busy status of the device, determine the result (pass /fail) of a program or erase operation, and det ermine whether the device is in protect mode. the device status is output via the i/o port using after a 70h command input. the status read can also be used during a read operation to find out the ready/busy status. the resultin g information is outlined in table 6. table 6. status output table definition page program block erase cache program read cache read i/o1 chip status1 pass: 0 fail: 1 pass/fail pass/fail invalid i/o2 chip status 2 pass: 0 fail: 1 invalid pass/fail inva lid i/o3 not used 0 0 0 i/o4 not used 0 0 0 i/o5 not used 0 0 0 i/o6 page buffer ready/busy ready: 1 busy: 0 ready/busy ready/busy ready/busy i/o7 data cache ready/busy ready: 1 busy: 0 ready/busy ready/busy ready/busy i/o8 write protect not protecte d :1 protected: 0 write protect write protect write protect the pass/fail status on i/o1 and i/o2 is only valid during a program/erase operation when the device is in the ready state. chip status 1: during a auto page program or auto block erase operatio n this bit indicates the pass/fail result. during a auto page programming with data cache operation, this bit shows the pass/fail results of the current page program operation , and therefore this bit is only valid when i/o6 shows the ready state. chip sta tus 2: this bit shows the pass/fail result of the previous page program operation during auto page programming with data cache. this status is valid when i/o7 shows the ready state. the status output on the i/o6 is the same as that of i/o7 if the command i nput just before the 70h is not 15h or 31h . re
th58nvg3s0h ba i6 2013-09- 20 c 53 an application example with multiple devices is shown in the figure below. system design note: if the pin signals from multiple devices are wired together as shown in the diagram, th e status read function can be used to determine the status of each individual device. reset the reset mode stops all operations. for example, in case of a program or erase operation, the internally generated voltage is discharged to 0 volt and the device enters the wait state. reset during a cache program/page copy may not just stop the most recent page program but it may also stop the previous program to a page depending on when the ff reset is input. the response to a ffh reset command input during th e various device operations is as follows: when a reset (ffh) command is input during programming internal v pp 80 10 ff 00 t rst (max 10 ? s) device 1 cle device 2 d evice 3 device n device n ? 1 ale status on device 1 70h ale i/o 70h status on device n cle busy i/o1 to i/o8 3 ce by / ry 1 ce 1n ce ? re n ce by / ry we 2 ce
th58nvg3s0h ba i6 2013-09- 20 c 54 when a reset (ffh) command is input during erasing when a reset (ffh) command is input during read operation when a reset (ffh) command is input du ring ready when a status read command (70h) is input after a reset when two or more reset commands are input in succession 10 ff ff (3) (2) (1) the second command is invalid, but the third command is valid. ff ff ff i/o status : pass/fail ? pass : ready/busy ? rea dy ff 70 00 ff 00 t rst (max 5 ? s) 30 internal erase voltage d0 ff 00 t rst (max 500 ? s) 00 t rst (max 5 ? s) ff by / ry
th58nvg3s0h ba i6 2013-09- 20 c 55 application notes and comments (1) power - on/off sequence: the timing sequence shown in the figure below is necessary for the pow er - on/off sequence. the device internal initialization starts after the power supply reaches an appropriate level in the power on sequence. during the initialization the device ready/busy signal indicates the busy state as shown in the figure below. in thi s time period, the acceptable commands are ffh or 70h. the signal is useful for protecting against data corruption at power - on/off. (2) power - on reset the following sequence is necessary because some input signals may not be stable at power - on. (3) prohibition of unspecified commands the operation commands are listed in table 3. input of a command other than those specified in table 3 is prohibited. stored data may be corrupted if an unknown command is entered during the command cycle. (4) restriction of commands while in the busy state during the busy state, do not input any command except 70h(71h) and ffh. ff reset power on v il operation 0 v v cc 2.7 v 2.5 v v il don t care don t care v i h , , cle, ale invalid invalid ready/busy 1 .2 ms max 100 ? s max don t care invalid 1 .2 ms max 100 ? s max 1ms 2.7 v 2.5 v 0.5 v 0.5 v wp wp we ce re
th58nvg3s0h ba i6 2013-09- 20 c 56 (5) acceptable commands after serial input command 80h once the serial input command 80h has been input, do not i nput any command other than the column address change in serial data input command 85h , auto program command 10h , multi page program command 11h , auto program with data cache command 15h , or the reset command ffh . if a command other than 85h , 10h , 11h , 15h or ffh is input, the program operation is not performed and the device operation is set to the mode which the input command specifies. (6) addressing for program operation within a block, the pages must be programmed con secutively from the lsb (least significant bit) page of the block to msb (most significant bit) page of the block. random page address programming is prohibited. data in: data (1) pa ge 0 data register page 2 page 1 page 31 page 63 (1) (2) (3) (32) (64) data (64) from the lsb page to msb page data in: data (1) page 0 data register page 2 page 1 page 31 page 63 (2) (32) (3) (1) (64) data (64) ex.) random page program (prohibition) command other than 85h , 10h , 11h , 15h or ffh 80 programming cannot be executed. 10 xx mode specified by the command. 80 ff address input we by / ry
th58nvg3s0h ba i6 2013-09- 20 c 57 (7) status read during a read operation the device status can be read out by inputting the s tatus read command 70h in read mode. once the device has been set to status read mode by a 70h command, the device will not return to read mode unless the read command 00h is inputted during [a]. if the read command 00h is inputted during [a], stat us read mode is reset, and the device returns to read mode. in this case, data output starts automatically from address n and address input is unnecessary (8) auto programming failure (9) : termination for the ready/busy pin ( ) a pull - up resistor needs to be used for termination because the buffer consists of an open drain circuit. fail 80 10 80 10 address m data input 70 i/o address n data input if the programming result for page address m is fail, do not try to program the page to address n in another block without the data input sequence. because the previous input data ha s been lost, the same input sequence of 80h command, address and data is necessary. 10 80 m n t his data may vary from device to device. we recommend that you use this data as a reference when selecting a resistor value. v cc v cc device v ss r c l 1.5 ? s 1.0 ? s 0.5 ? s 0 1 k ? 4 k ? 3 k ? 2 k ? 15 ns 10 ns 5 ns t f t r r t r t f v cc ? 3.3 v ta ? 25 c c l ? 50 pf t f ready v cc t r busy 00 address n command [a ] status read command input status read status output . 70 00 30 by / ry by / ry ce re by / ry we
th58nvg3s0h ba i6 2013-09- 20 c 58 (10) note regarding the signal the erase and program operations are automatically reset when goes low. the operations are enabled and disabled as follows: enable programming disable programming enable erasing disable erasing t ww (100 ns min) 80 10 din t ww (100 ns min) 60 d0 din t ww (100 ns min) 80 10 din t ww (100 ns min) 60 d0 din wp we wp by / ry
th58nvg3s0h ba i6 2013-09- 20 c 59 (11) when six address cycles are input alt hough the device may read in a sixth address, it is ignored inside the chip. read operation program operation cle address input 00h ale i/o ignored 30 h cle ale i/o address input ignored 80h data input ce by / ry we
th58nvg3s0h ba i6 2013-09- 20 c 60 (12) several programming cycles on the same page (partial page program) each segment can be programmed individually as follows: data pattern 4 data pattern 1 all 1 s all 1 s all 1 s all 1 s 1st programming 2nd programming 4th programming result data patt ern 1 data pattern 2 data pattern 4 data pattern 2
th58nvg3s0h ba i6 2013-09- 20 c 61 (13) invalid blo cks (bad blocks) the device occasionally contains unusable blocks. therefore, the following issues must be recognized: please do not perform an erase operation to bad blocks. it may be impossible to recover the bad block information if the information is erased. check if the device has any bad blocks after installation into the system. refer to the test flow for bad block detection. bad blocks which are detected by the test flow must be managed as unusable blocks by the system. a bad block does not affect the performance of good blocks because it is isolated from the bit lines by select gates. the number of valid blocks over the device lifetime is as follows: min typ. max unit valid (good) block number 4016 ? ? 4096 block bad block test flow r egarding invalid blocks, bad block mark is in whole pages. please read one column of any page in each block. if the data of the column is 00(hex), define the block as a bad block . * 1: no erase operation is allowed to detected ba d blocks bad block bad block pass read check start bad block * 1 last block end yes fail block no ? 1 no block no. ? block no. ? 1
th58nvg3s0h ba i6 2013-09- 20 c 62 (14) failure phenomena for program and erase operations the device may fail during a program or erase operation. the following possible failure modes should be considered when implementing a highly reliable system. failure mode detection and counterme asure sequence block erase failure status read after erase ? block replacement page programming failure status read after program ? block replacement read bit error ecc correction / block refresh ? ecc: error correction code. 8 bit correction per 512 by tes is necessary. ? block replacement program erase when an error occurs during an erase operation, prevent future accesses to this bad block (again by creating a table within the system or by using another appropriate scheme). (15) do not turn off the po wer before write/erase operation is complete. avoid using the device when the battery is low. power shortage and/or power failure before write/erase operation is complete will cause loss of data and/or damage to data. (16) the number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations. when an error happens in block a, try to reprogram the data into another block (block b) by loading from an external buffer. then, prevent further system accesses to block a ( by creating a bad block table or by using another appropriate scheme). block a block b error occurs buffer memory
th58nvg3s0h ba i6 2013-09- 20 c 63 (17) reliability guidance this reliability guidance is intended to notify some guidance related to using nand flash with 8 bit ecc for each 512 bytes . for detailed reliabil ity data, please refer to toshiba s reliability note. although random bit errors may occur during use, it does not necessarily mean that a block is bad. generally, a block should be marked as bad when a program status failure or erase status failure is de tected. the other failure modes may be recovered by a block erase. ecc treatment for read data is mandatory due to the following data retention and read disturb failures. ? write/erase endurance write/erase endurance failures may occur in a cell, page, or b lock, and are detected by doing a status read after either an auto program or auto block erase operation. the cumulative b ad block count will increase along with the number of write/erase cycle s . ? data retention the data in memory may change after a cert ain amount of storage time. t his is due to charge loss or charge gain. after block erasure and reprogramming, the block may become usable again. here is the combined characteristics image of write/erase endurance and data retention. ? read disturb a read operation may disturb the data in memory . the data may change due to charge gain. usually , bit errors occur on other pages in the block, not the page being read. after a large number of read cycles (between block erases), a tiny ch arge may build up and can cause a cell to be soft programmed to another state. after block erasure and reprogramming, the block may become usable again. write/erase endurance [cycle s ] data retention [year s ]
th58nvg3s0h ba i6 2013-09- 20 c 64 package dimensions weight: 0.101 g (typ.) unit : mm
th58nvg3s0h ba i6 2013-09- 20 c 65 revision history d ate rev. description 20 1 3 - 0 8 - 01 0 . 1 0 preliminary version 2013 - 09 - 20 1.00 described weight. deleted tentative notation.
th58nvg3s0h ba i6 2013-09- 20 c 66 restrictions on product use ? toshiba corporation, and its subsidiaries and affilia tes (collectively "toshiba"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduced withou t prior written permission from toshiba. even with toshiba's written permission, reproduction is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can m alfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, softwar e and systems which minimize risk and avoid situations in which a malfunction or failure of produ ct could cause loss of human life, bodily injury or damage to property, including data loss or corruption. before customers use the product, create designs including t he product, or incorporate the product into their own applications, customers must also r efer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the "tos hiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be used with or for. customers are solely responsible for all as pects of their own product design or applications, including but not limited t o (a) determining the appropriateness of the use of this product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample applicatio n circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted for use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). ex cept for specific applications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, shi ps and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance - related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse - engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shal l not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is presented only as guidance for product use. no responsibility is as sumed by toshiba for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. n o license to any intellectual property right is granted by this document, whether express or implied, by e stoppel or otherwise. ? absent a written signed agreement, except as provided in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, i ndirect, consequential, special, or incidental damages or loss, including without limitation, loss of profits, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related software or technolo gy for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or mis sile technology products (mass destruction weapons). product and related software a nd technology may be controlled under the applicable export laws and regulations including, without limitation, the japanese foreign exchange and foreign trade law and the u.s. export administration regulations. export and re - export of product or related s oftware or technology are strictly prohibited except in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pr oduct. please use product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substance s, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losse s occurring as a resul t o f noncompliance with applicable laws and regulations.

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